- 関
- voltage dependency、voltage-dependent
WordNet
- the state of relying on or being controlled by someone or something else (同)dependance, dependency
- the rate at which energy is drawn from a source that produces a flow of electricity in a circuit; expressed in volts (同)electromotive_force, emf
PrepTutorEJDIC
- (…に)頼ること,(…への)依存,依頼《+『on(upon)』+『名』》 / (…への)信頼,信用《+『on』+『名』》
- 電圧,電圧量,ボルト数
UpToDate Contents
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English Journal
- Rab27a GTPase modulates L-type Ca(2+) channel function via interaction with the II-III linker of CaV1.3 subunit.
- Reichhart N1, Markowski M2, Ishiyama S3, Wagner A3, Crespo-Garcia S2, Schorb T2, Ramalho JS4, Milenkovic VM5, Föckler R3, Seabra MC4, Strauß O6.
- Cellular signalling.Cell Signal.2015 Nov;27(11):2231-40. doi: 10.1016/j.cellsig.2015.07.023. Epub 2015 Jul 31.
- In a variety of cells, secretory processes require the activation of both Rab27a and L-type channels of the CaV1.3 subtype. In the retinal pigment epithelium (RPE), Rab27a and CaV1.3 channels regulate growth-factor secretion towards its basolateral side. Analysis of murine retina sections revealed a
- PMID 26235199
- Electrical properties of ZnO single nanowires.
- Stiller M1, Barzola-Quiquia J, Zoraghi M, Esquinazi P.
- Nanotechnology.Nanotechnology.2015 Oct 2;26(39):395703. doi: 10.1088/0957-4484/26/39/395703. Epub 2015 Sep 11.
- We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature. Th
- PMID 26357984
- Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50Gy with (60)Co.
- Pejović MM1.
- Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine.Appl Radiat Isot.2015 Oct;104:100-5. doi: 10.1016/j.apradiso.2015.06.024. Epub 2015 Jun 20.
- This paper reports response of p-channel MOSFETs (RADFETs) to (60)Co gamma radiation in the 10-50Gy dose range and signal fading (room temperature annealing) for 100 days after irradiation. RADFETs with three different thicknesses of the gate oxide layer were used. Irradiations were performed at gat
- PMID 26142808
Japanese Journal
- Room temperature observation of high spin polarization in post annealed Co
- On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors
- フッ素系不活性液体で絶縁されたプリント配線パターン電極のESD試験におけるフラッシオーバ電圧の電極形状依存性 (放電 誘電・絶縁材料 高電圧合同研究会 放電/高電圧/誘電・絶縁材料)
- 電気学会研究会資料. ED = The papers of technical meeting on electrical discharges, IEE Japan 2017(1-7), 1-5, 2017-01-26
- NAID 40021081847
★リンクテーブル★
[★]
- 英
- voltage dependence、voltage dependency、voltage-dependent
- 関
- 電位依存的、膜電位依存性、電位依存
[★]
- 関
- voltage dependence、voltage dependency
[★]
- 関
- voltage dependence、voltage-dependent
[★]
- 英
- voltage dependence
- 関
- 電位依存性
[★]
- たよること、依存、依存状態。信頼、依存関係。依存症
- あよりとなるもの、頼みの綱
- 関
- depend、dependent
[★]
- 関
- electric potential、electrical potential、potential