Zitterbewegung of electrons in carbon nanotubes created by laser pulses.
Rusin TM1, Zawadzki W.
Journal of physics. Condensed matter : an Institute of Physics journal.J Phys Condens Matter.2014 May 28;26(21):215301. doi: 10.1088/0953-8984/26/21/215301. Epub 2014 May 2.
We describe a possibility of creating non-stationary electron wave packets in zigzag carbon nanotubes (CNT) illuminated by short laser pulses. After the disappearance of the pulse the packet experiences a trembling motion (Zitterbewegung, ZB). The band structure of CNT is calculated using the tight-
Dissection of open chromatin domain formation by site-specific recombination in Drosophila.
Zielke T, Saumweber H.
Journal of cell science.J Cell Sci.2014 May 15;127(Pt 10):2365-75. doi: 10.1242/jcs.147546. Epub 2014 Mar 17.
Drosophila polytene interphase chromosomes provide an ideal test system to study the rules that define the structure of chromatin domains. We established a transgenic condensed chromatin domain cassette for the insertion of large pieces of DNA by site-specific recombination. Insertion of this casset
Core level excitations-A fingerprint of structural and electronic properties of epitaxial silicene.
Friedlein R1, Fleurence A1, Aoyagi K1, de Jong MP2, Van Bui H2, Wiggers FB2, Yoshimoto S3, Koitaya T3, Shimizu S3, Noritake H3, Mukai K3, Yoshinobu J3, Yamada-Takamura Y1.
The Journal of chemical physics.J Chem Phys.2014 May 14;140(18):184704. doi: 10.1063/1.4875075.
From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp(3)-hybridized silicon. In particular, it is re
… The potential profiles and interband transition energies of the strained type-II CdSe/CdS core–shell QDs were calculated. … The calculated interband transition energies slightly decreased from 2.061 to 2.007 eV when the shell thickness increased from 10 to 17 Å. … The theoretical interband transition energy of 2.007 eV was in reasonable agreement with the photoluminescence excitonic transition energy of 1.98 eV. …
Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor–liquid–solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping
… In accordance with the prediction by a theoretical band alignment calculation of the conduction- and valence-bands discontinuities, the transition energy of 1.43 eV was due to the interband transition at the WZ-ZB interface. … This indicate that this interband transition became significant when the amount of WZ phase increased, which resulted from the increased Si doping. …
Extension of Photopolymerization Region from the Nanoscale to the Macroscopic Scale Using a Chemically Amplified Photoresist
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Bulletin of the Chemical Society of Japan 88(2), 277-282, 2015
… The source intensity, wavelength, reaction temperature, and irradiation time-dependence measurements revealed that interactions between the resist and the Au nanoparticles modified the electronic structure of the resists, or electron transfer from through interband excitation of Au. …