目次
WordNet
- a wandering or disorderly grouping (of things or persons); "a straggle of outbuildings"; "a straggle of followers"
- someone who strays or falls behind (同)strayer
PrepTutorEJDIC
- 《副詞[句]を伴って》ばらばらに広がる,散在する;ばらばらに行く(来く) / (行進などで)本隊からはぐれる;進路からそれる
- 落後者・連れにはぐれた人
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- 1. バセドウ眼症（グレーブス眼窩疾患：眼症）の治療 treatment of graves orbitopathy ophthalmopathy
- 2. バセドウ眼症（グレーブス眼症：眼窩疾患）の病因および臨床的特徴 pathogenesis and clinical features of graves ophthalmopathy orbitopathy
- 3. 視覚変化が認められた小児患者に対するアプローチ approach to the pediatric patient with vision change
- 4. 甲状腺機能亢進症およびバセドウ病の神経学的症状 neurologic manifestations of hyperthyroidism and graves disease
- 5. Geriatric bipolar disorder: General principles of treatment
English Journal
- Lateral displacement induced disorder in L10-FePt nanostructures by ion-implantation.
- Gaur N, Kundu S, Piramanayagam SN, Maurer SL, Tan HK, Wong SK, Steen SE, Yang H, Bhatia CS.Source1] Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 [2] Data Storage Institute, A*STAR (Agency for Science, Technology and Research), Singapore 117608.
- Scientific reports.Sci Rep.2013 May 28;3:1907. doi: 10.1038/srep01907.
- Ion implantation is a promising technique for fabricating high density bit patterned media (BPM) as it may eliminate the requirement of disk planarization. However, there has not been any notable study on the impact of implantation on BPM fabrication of FePt, particularly at nano-scale, where the la
- PMID 23712784
- Fundamental proximity effects in focused electron beam induced deposition.
- Plank H, Smith DA, Haber T, Rack PD, Hofer F.SourceInstitute for Electron Microscopy, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria. harald.plank@felmi-zfe.at
- ACS nano.ACS Nano.2012 Jan 24;6(1):286-94. doi: 10.1021/nn204237h. Epub 2011 Dec 23.
- Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasin
- PMID 22181556
- Single ion implantation for single donor devices using Geiger mode detectors.
- Bielejec E, Seamons JA, Carroll MS.SourceSandia National Laboratories, PO Box 5800, Albuquerque, NM 87185-1056, USA.
- Nanotechnology.Nanotechnology.2010 Feb 26;21(8):85201. doi: 10.1088/0957-4484/21/8/085201. Epub 2010 Jan 26.
- Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard fo
- PMID 20101077
Japanese Journal
- Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor
- Moon Dae-hyun,Song Jae-Joon,Kim Ohyun
- Jpn J Appl Phys 50(6), 06GF16-06GF16-5, 2011-06-25
- … Results indicated that a 3 nm increment of the source/drain lateral doping straggle can reduce the intrinsic delay by about 30% and the leakage current by about 95%. …
- NAID 40018868799
- Effect of Source/Drain Doping Gradient on Threshold Voltage Variation in Double-Gate Fin Field Effect Transistors as Determined by Discrete Random Doping
- Moon Dae-hyun,Song Jae-Joon,Kim Ohyun
- Jpn J Appl Phys 49(10), 104301-104301-4, 2010-10-25
- … To effectively suppress this severe variation, we suggest S/D doping gradient engineering to make the lateral straggle of S/D doping ($\sigma_{\text{S/D}}$) larger than 2 nm to minimize $\Delta V_{\text{th}}$. …
- NAID 150000053230
- グローバル新潮流を追う(第4回)デトロイト3の行方 GM社はOpel社売却を中止 燃費ナンバー1目指すFord社
- 日経automotive technology (16), 72-75, 2010-01
- 2008年から2009年にかけて、米国の自動車市場は急速に縮小した。月間販売台数の推移を、米Motor Intelligence社調べのSAAR（季節調整済みの年率換算販売台数）で見ると、リーマンショック直後の2008年10月は1082万台で同年12月まで1000万台以上を維持していた。しかし、2009年に入ると2月の917万台を底に900万台半ばから後半で推移している。
- NAID 140000002342
- Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices(Device,<Special Section>Low-Power, High-Speed LSIs and Related Technologies)
- TANAKA Katsuhiko,TAKEUCHI Kiyoshi,HANE Masami
- IEICE transactions on electronics E90-C(4), 842-847, 2007-04-01
- … Through the optimization of lateral straggle and offset of S/D profile, the ITRS specifications for drive current and off-state leakage current are achievable by FinFET with 10nm fin width. …
- NAID 110007522186
Related Links
- straggleとは。意味や和訳。[動](自)1 （道路・進路などから）それる, （隊列などから） はぐれる, 落後するa straggling soldier落後兵.2 うろつく, さまよう；ばらばらに［だらだら と］行く［来る, 進む］((along))Refugees straggle along... - goo辞書は国語、英和、 和英、 ...
- intr.v. strag·gled, strag·gling, strag·gles. 1. To stray or fall behind. 2. To proceed or spread out in a scattered or irregular group. n. A scattered or disorderly group, as of people or things.
- Synonyms for straggle at Thesaurus.com with free online thesaurus, antonyms, and definitions. Dictionary and Word of the Day.
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