WordNet
- the branch of electronics that deals with miniature components
- of or relating to or consisting of miniature electronic components
PrepTutorEJDIC
- マイクロ電子工学
Wikipedia preview
出典(authority):フリー百科事典『ウィキペディア(Wikipedia)』「2018/04/26 21:22:53」(JST)
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Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre-scale or smaller. These devices are typically made from semiconductor materials. Many components of normal electronic design are available in a microelectronic equivalent. These include transistors, capacitors, inductors, resistors, diodes and (naturally) insulators and conductors can all be found in microelectronic devices. Unique wiring techniques such as wire bonding are also often used in microelectronics because of the unusually small size of the components, leads and pads. This technique requires specialized equipment and is expensive.
Digital integrated circuits (ICs) consist mostly of transistors[why?]. Analog circuits commonly contain resistors and capacitors as well. Inductors are used in some high frequency analog circuits, but tend to occupy larger chip area due to their lower reactance at low frequencies. Gyrators can replace them in many applications.
As techniques have improved, the scale of microelectronic components has continued to decrease[citation needed]. At smaller scales, the relative impact of intrinsic circuit properties such as interconnections may become more significant. These are called parasitic effects, and the goal of the microelectronics design engineer is to find ways to compensate for or to minimize these effects, while delivering smaller, faster, and cheaper devices.
Today, microelectronics design is largely aided by Electronic Design Automation software.
See also
- Digital circuit
- Electrical engineering
- Kelvin probe force microscope
- Macroelectronics
- Microscale chemistry
- Nanoelectronics
References
- Veendrick, H.J.M. (2011). Bits on Chips. p. 253. ISBN 978-1-61627-947-9. https://openlibrary.org/works/OL15759799W/Bits_on_Chips/
Microtechnology
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Basic structures |
- Interdigital transducer
- Cantilever
- Microchannel
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Applications |
Sensors |
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Actuators |
- Comb drive
- Scratch drive actuator
- Thermal actuator
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Switches |
- Digital micromirror device
- Optical switch
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Other |
- IBM Millipede
- RF-MEMS
- MOEMS
- Microphotonics
- Bio-MEMS
- Microfluidics
- Micropower
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Processes |
General |
- Surface micromachining
- Bulk micromachining
- HAR micromachining
- Deposition
- Lithography
- Etching
- Wire bonding
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Specific |
- LOCOS
- STI
- LIGA
- Lift-off
- Photolithography
- SOI
- Smart Cut
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Wikibooks has a book on the topic of: Microtechnology |
Authority control |
- GND: 4039207-7
- NDL: 00567394
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English Journal
- Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory.
- Qian SB1, Wang YP1, Shao Y1, Liu WJ1, Ding SJ2.
- Nanoscale research letters.Nanoscale Res Lett.2017 Dec;12(1):138. doi: 10.1186/s11671-017-1925-z. Epub 2017 Feb 21.
- PMID 28235376
- Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.
- Wang G1, Luo J2,3, Qin C2, Liang R4, Xu Y2, Liu J2, Li J2, Yin H2,3, Yan J2, Zhu H2, Xu J4, Zhao C2,3, Radamson HH5,6,7, Ye T2,3.
- Nanoscale research letters.Nanoscale Res Lett.2017 Dec;12(1):123. doi: 10.1186/s11671-017-1908-0. Epub 2017 Feb 16.
- PMID 28228008
- Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.
- Liu Y1, Niu J2, Wang H1, Han G3, Zhang C1, Feng Q1, Zhang J1, Hao Y1.
- Nanoscale research letters.Nanoscale Res Lett.2017 Dec;12(1):120. doi: 10.1186/s11671-017-1913-3. Epub 2017 Feb 16.
- PMID 28228005
Japanese Journal
- Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment
- Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications
- Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique
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