[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].
Sun XJ1, Ma SY, Wei JJ, Xu XL.
Guang pu xue yu guang pu fen xi = Guang pu.Guang Pu Xue Yu Guang Pu Fen Xi.2008 Sep;28(9):2033-7.
Ge thin films were deposited on porous silicon substrate using the RF magnetron sputtering technique with Ge target and sputtering for 4, 8 and 12 min respectively. Ge-containing silicon oxide thin films were deposited on n-type Si substrate using the RF magnetron sputtering technique with a Ge-SiO2