目次
WordNet
- United States physicist (born in England) who contributed to the development of the electronic transistor (1910-1989) (同)William Shockley, William Bradford Shockley
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出典(authority):フリー百科事典『ウィキペディア（Wikipedia）』「2016/09/22 12:56:51」(JST)
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English Journal
- Elucidation of Excitation Energy Dependent Correlated Triplet Pair Formation Pathways in an Endothermic Singlet Fission System.
- Thampi A1, Stern HL1, Cheminal A1, Tayebjee MJY1, Petty AJ 2nd2, Anthony JE2, Rao A1.
- Journal of the American Chemical Society.J Am Chem Soc.2018 Jan 9. doi: 10.1021/jacs.7b06274. [Epub ahead of print]
- PMID 29275626
- Atomistic Simulation of the Rate-Dependent Ductile-to-Brittle Failure Transition in Bicrystalline Metal Nanowires.
- Tao W, Cao P, Park HS.
- Nano letters.Nano Lett.2018 Jan 3. doi: 10.1021/acs.nanolett.7b04972. [Epub ahead of print]
- The mechanical properties and plastic deformation mechanisms of metal nanowires have been studied intensely for many years. One of the important yet unresolved challenges in this field is to bridge the gap in properties and deformation mechanisms reported for slow strain rate experiments ($\sim10^{-
- PMID 29298076
- Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array.
- Nowakowska S, Mazzola F, Alberti MN, Song F, Voigt T, Nowakowski J, Wäckerlin A, Wäckerlin C, Wiss J, Schweizer WB, Broszio M, Polley CM, Leandersson M, Fatayer S, Ivas T, Baljozovic M, Mousavi SF, Ahsan A, Nijs T, Popova O, Zhang J, Muntwiler M, Thilgen C, Stöhr M, Pasti IA, Skorodumova NV, Diederich F, Wells J, Jung TA.
- ACS nano.ACS Nano.2017 Dec 22. doi: 10.1021/acsnano.7b07989. [Epub ahead of print]
- Quantum devices depend on addressable elements, which can be modified separately and in their mutual interaction. Self-assembly at surfaces, e.g. formation of a porous (metal-) organic network, provides an ideal way to manufacture arrays of identical quantum boxes, arising in this case from the conf
- PMID 29272579
Japanese Journal
- Transient characteristics of AlGaN/GaN high-electron-mobility transistor with bias-controllable field plate
- Mase Suguru,Egawa Takashi,Wakejima Akio
- Appl. Phys. Express 8(3), 036601, 2015-02-23
- … Numerical analysis of carrier trapping using the Shockley–Read–Hall process also provides a trapped carrier density of 5.1 × …
- NAID 150000110227
- Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
- Yun Joosun,Shim Jong-In,Hirayama Hideki
- Appl. Phys. Express 8(2), 022104, 2015-01-22
- … It is shown that the internal quantum efficiency (η<inf>IQE</inf>), injection efficiency (η<inf>inj</inf>), light-extraction efficiency (η<inf>LEE</inf>), Shockley–Read–Hall recombination coefficient (A), and Auger coefficient (C) can be determined by the carrier rate equation using the theoretical radiative recombination coefficient (B), experimentally measured wavelength spectrum, and external quantum efficiency (η<inf>EQE</inf>). …
- NAID 150000110104
- Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes
- Han Dong-Pyo,Oh Chan-Hyoung,Zheng Dong-Guang,Kim Hyunsung,Shim Jong-In,Kim Kyu-Sang,Shin Dong-Soo
- Jpn. J. Appl. Phys. 54(2S), 02BA01, 2014-12-08
- … Through the analysis, we infer the dominant nonradiative recombination mechanisms to be the Shockley–Read–Hall process for the sample with a low TDD (∼1 × …
- NAID 150000110081
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