WordNet

having a specified height; "five feet tall"; "five feet in height"
holding office; "the in party"
to or toward the inside of; "come in"; "smash in the door" (同)inwards, inward
currently fashionable; "the in thing to do"; "large shoulder pads are in"
directed or bound inward; "took the in bus"; "the in basket"
the vertical dimension of extension; distance from the base of something to the top (同)tallness
the decade from 1880 to 1889 (同)1880s
the decade from 1980 to 1989 (同)1980s
the time of life between 80 and 90 (同)mid-eighties

PrepTutorEJDIC

《具体的な場所,位置》 / …『の中に』(『で』) / …『において』,…で / 《intoの代りに移動を表す動詞と共に》…『の中へ』 / (乗り物)『に乗って』 / …『の状熊に』(『で』) / …『に従事して』,に属して / …『を身につけて』,に覆われて / 《『in』do『ing』の形で》…『するときに』,する際に(when) / 《時間》 / …『して』,…『が経過したあと』 / …『の間に』 / …『については』,…の点では / 《方法・手段・材料》…『で』 / 《人を目的語にして,性質・能力があることを示して》…の中に / …の目的で,のつもりで,として / 《比率割合》…のうちで,につき / 《過去分詞に伴って》…に[…されて] / 『中へ』(に) / 『在宅して』,帰って / (乗り物などが)『到着して』,(時期・季節が)来て / 出回って,流行して / 《俗》流行の,当世風の / 《話》特定の人々にのみ理解される
〈U〉(物の)『高さ』《+『of』+『名』》 / 〈U〉《時にa~》(一定の平面からの)高さ,海抜,標高 / 〈U〉〈C〉身長 / 〈C〉《しばしば複数形で単数扱い》高い所,高台 / 〈C〉《the~》『絶頂』,極致,まっ最中
indiumの化学記号
Indiana

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1. 低身長の小児および思春期患者に対する診断的アプローチ diagnostic approach to children and adolescents with short stature
2. 乳幼児および思春期前の小児における通常の成長パターン normal growth patterns in infants and prepubertal children
3. 小児の成長測定 measurement of growth in children
4. 高身長や異常に急激な成長がみられる小児 the child with tall stature and or abnormally rapid growth
5. 低身長の原因 causes of short stature

Development and validation of a human biomechanical model for rib fracture and thorax injuries in blunt impact.

Cai Z1, Lan F, Chen J.
Computer methods in biomechanics and biomedical engineering.Comput Methods Biomech Biomed Engin.2015 Jul;18(9):974-980. Epub 2014 Jan 27.
From 1990 to approximately 50,000-120,000 people die annually of road traffic accidents in China. Traffic accidents are the main cause of death of Chinese adults aged 15-45 years. This study aimed to determine the biomechanical response and injury tolerance of the human body in traffic accidents. T
PMID 24460401

Geometric sensitivity of patient-specific finite element models of the spine to variability in user-selected anatomical landmarks.

Little JP1, Adam CJ.
Computer methods in biomechanics and biomedical engineering.Comput Methods Biomech Biomed Engin.2015 May;18(6):676-88. doi: 10.1080/10255842.2013.843673. Epub 2013 Nov 21.
Software to create individualised finite element (FE) models of the osseoligamentous spine using pre-operative computed tomography (CT) data-sets for spinal surgery patients has recently been developed. This study presents a geometric sensitivity analysis of this software to assess the effect of int
PMID 24261987

Three-dimensional finite element analysis of stress distribution in retention screws of different crown-implant ratios.

Moraes SL1, Pellizzer EP, Verri FR, Santiago JF Jr, Silva JV.
Computer methods in biomechanics and biomedical engineering.Comput Methods Biomech Biomed Engin.2015 May;18(7):689-96. doi: 10.1080/10255842.2013.820719. Epub 2013 Aug 15.
The retaining screw of the implant-supported dental prosthesis is the weakest point of the crown/implant system. Furthermore, crown height is another important factor that may increase the lever arm. Therefore, the aim of this study was to assess the stress distribution in implant prosthetic screws
PMID 23947571

Origin of the open-circuit voltage in small-molecular organic photovoltaic devices: Effects of deposition rate control of donor material

Lee Chih-Chien,Chang Wen-Chang,Su Wei-Cheng,Huang Bo-Yao,Lin Chun-Feng,Liu Shun-Wei
Jpn. J. Appl. Phys. 54(3S), 03CD01, 2015-01-05
… The presence of pinholes as shown in atomic force microscopic images indicated the strong molecular interaction at the lower donor deposition rate, resulting in the severe leakage current from acceptor to anode as observed in the dark current. … The higher barrier height at the donor–acceptor interface was attributed to the improved V<inf>OC</inf>for the device with higher donor deposition rate. …
NAID 150000110083

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

Khurelbaatar Zagarzusem,Shim Kyu-Hwan,Cho Jaehee,Hong Hyobong,Reddy V. Rajagopal,Choi Chel-Jong
MATERIALS TRANSACTIONS, 2015
… The SBD parameters, such as Schottky barrier height (ΦB), ideality factor (n), saturation current (I0), doping concentration (ND), and series resistance (Rs), were obtained as a function of temperature. … The Richardson constant (A**) obtained from the In(Io/T2) versus 1000/T plot was much less than the theoretical value for n-Si. …
NAID 130004704639

Suzuki Kohta
Journal of Epidemiology, 2015
… This concept is known as the "Developmental Origins of Health and Disease (DOHaD) hypothesis." Thus, it is necessary to collect information about the fetal and infancy periods in order to examine the association between fetal and infancy exposures and later growth. … Based on the DOHaD hypothesis, childhood growth trajectories, which were described by multilevel analysis, might be important in examining the effects of early-life environment on later-life health. …
NAID 130004694368